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High-Voltage Electron Microscope

High-Voltage Electron Microscope Leading-edge Equipment Home

Equipment Introduction

The High Voltage Electron Microscope (HVEM) utilizes a high accelerating voltage for structural analysis at atomic-resolution. The HVEM is employed in basic and applied sciences, such as in structural analysis of new materials and development of infinitesimal materials.

Characteristics of the Equipment

  • Observation of three-dimensional (3-D) atomic structure of materials by concurrently implementing its atomic resolution (0.12 nm) and high tilt specimen angle (±60°)
  • Chemical signal detection with high collection rate using the advanced energy filtering system (HV-GIF) that utilizes the relativity effect
  • In-situ and Cryo-EM analysis with customized specimen holder

Representative Research Case

Direct observation of thermal disorder and decomposition of black phosphorus

The initial thermal disorder and decomposition of black phosphorus were examined using in situ heating experiments. The breaking of crystallographic symmetry can be initiated by the surficial vacancy and proceeds toward both interlayer ([010]) and intralayer ([001]) directions. The results on the thermal behavior of black phosphorus provide useful guidance for thin film deposition and fabrication processes with black phosphorus.

Investigation of the initial thermal disorder and decomposition mechanism of black phosphorus

Application

  • Atomic structure analysis of the nano materials
  • Real-time structure analysis

Representative Research Papers

  • Growth of close-packed crystalline polypyrrole on graphene oxide via in situ polymerization of two-monomer-connected precursors
    Wonbin Kim, Hong-Joon Lee, Zubair Ahmad, Seung Jo Yoo, Youn-Joong Kim, Santosh Kumar, Mohammad Changez, Jung-Soo Leee and Jae-Suk Lee, Nanosclae, 2019, 11, pp 15641, doi:10.1039/c9nr05398k
  • Selective electrochemical reduction of carbon dioxide to formic acid using indium–zinc bimetallic nanocrystals
    Ik Seon Kwon, Tekalign Terfa Debela, In Hye Kwak, Hee Won Seo, Kidong Park, Doyeon Kim, Seung Jo Yoo, Jin-Gyu Kim, Jeunghee Park and Hong Seok Kang, Journal of Materials Chemistry A, 2019, 7, pp 22879-22883, doi:10.1039/c9ta06285h
  • Highly fluidic liquid at homointerface generates grain-boundary dislocation arrays for high-performance bulk thermoelectrics
    Hyeona Mun, Kyu Hyoung Lee, Seung Jo Yoo, Hyun-Sik Kim, Jiwon Jeong, Sang Ho Oh, G. Jeffrey Snyder, Young Hee Lee, Young-Min Kim, Sung Wng Kim, Acta Materialia, 2018, 159, pp 266-275, doi.org/10.1016/j.actamat.2018.08.027
  • Direct observation of thermal disorder and decomposition of black phosphorus
    Seung Jo Yoo, Heejin Kim, Ji-Hyun Lee and Jin-Gyu Kim, Nanotechnology, 2018, 29, pp 065702, doi.org/10.1088/1361-6528/aaa063
  • Atomic-level energy storage mechanism of cobalt hydroxide electrode for pseudocapacitors
    Ting Deng, Wei Zhang, Oier Arcelus, Jin-Gyu Kim, Javier Carrasco, Seung Jo Yoo, Weitao Zheng, Jiafu Wang, Hongwei Tian, Hengbin Zhang, Xiaoqiang Cui & Teo´filo Rojo, Nature Communications, 2017, 8, pp 15194, doi:10.1038/ncomms15194
  • Bent Polytypic ZnSe and CdSe Nanowires Probed by Photoluminescence
    Yejin Kim, Hyung Soon Im, Kidong Park, Jundong Kim, Jae-Pyoung Ahn, Seung Jo Yoo, Jin-Gyu Kim, and Jeunghee Park, Small, 2017, 13, pp 1603695, doi:10.1002/smll.201603695
  • Nanotwin-governed toughening mechanism in hierarchically structured biological materials
    Yoon Ah Shin, Sheng Yin, Xiaoyan Li, Subin Lee, Sungmin Moon, Jiwon Jeong, Minhyug Kwon, Seung Jo Yoo, Young-Min Kim, Teng Zhang, Huajian Gao & Sang Ho Oh, Nature Communications, 2016, 7, pp 10772, doi:10.1038/ncomms10772
  • Migration mechanism of a GaN bicrystalline grain boundary as a model system
    Sung Bo Lee, Seung Jo Yoo, Young-Min Kim, Jin-Gyu Kim & Heung Nam Han, Scientific Reports, 2016, 6, pp 26493, doi:10.1038/srep26493
  • In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi2Te3 (m = 3−8) Nanowires and First-Principles Calculations
    Chan Su Jung, Han Sung Kim, Hyung Soon Im, Kidong Park, Jeunghee Park, Jae-Pyoung Ahn, Seung Jo Yoo, Jin-Gyu Kim, Jae Nyeong Kim, and Ji Hoon Shim, Nano Letters, 2015, 15, pp 3923-3930, doi:10.1021/acs.nanolett.5b00755
  • Zn3P2−Zn3As2 Solid Solution Nanowires
    Hyung Soon Im, Kidong Park, Dong Myung Jang, Chan Su Jung, Jeunghee Park, Seung Jo Yoo, and Jin-Gyu Kim, Nano Letters, 2015, 15, pp 990-997, doi:10.1021/nl5037897