Development of a method for detecting impurities in OLEDs by adjusting the size of the gas cluster ion beam

Study Summary

The GCIB (Gas Cluster Ion Beam) device, which has been introduced for mass spectrometry of organic multilayer thin films, creates new organic matter analysis possibilities. GCIB has several unique characteristics. In particular, it can make a new output as an GCIB by adjusting the cluster size, so it can be used in various ways as a new control factor that is not present in the existing monoatomic ion beam. In this study, an analysis method using GCIB that can distinguish impurities, existing components, and fragment components in the OLED thin film by using ion beams with controlled cluster size was presented.

[Figure 1] Conceptual diagram of analyzing OLED thin-film components and impurities using GCIB gun

[Figure 2] Variation of mass peak in OLED thin film according to cluster ion beam size

Suggesting a new method for analyzing impurities inside OLED thin films using gas cluster ion beam