Surface potential measurements of a insulator film following primary ion gun irradiation for ToF-SIMS analysis and the observation of effects from the vacuum gauge

Study Summary

In ToF-SIMS, which analyzes using an ion beam, there are many difficulties when analyzing an insulator. Much of this difficulty is because charged ions do not escape from the insulator surface and remain. The surface potential formed on this surface was measured under various conditions, and the temporal change was first quantitatively measured. Charges and potential on the insulator's surface create variation through various processes and induce temporal changes in those processes. And in this experiment and measurement process, it was found that the high vacuum gauge had an effect on the sample surface, and the influence was quantitatively measured and corrected.

[Figure 1] Schematic diagram of experimental device for measuring the surface potential of an insulator using a GCIB gun

[Figure 2] Temporal change of surface potential, and effects from the vacuum gauge

When analyzing various insulator samples using a secondary ion mass spectrometer, it plays an essential role in minimizing the sample's effect by the primary analysis ion beam and the ion beam for sputtering.